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PDF MBR1060 Data sheet ( Hoja de datos )
| Número de pieza | MBR1060 | |
| Descripción | Schottky Barrier Rectifier ( Diode ) | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR1060
FEATURES
·Schottky Barrier Chip
·Guard Ring Die Construction for Transient Protection
·Low Power Loss/High Efficiency
·High Surge Capability
·High Current Capability，Low Forward Voltage Drop
·Plastic Material：UL Flammability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low-voltage,high frequency inverters，free wheeling
and polarrity protection applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VR(RMS) RMS Reverse Voltag
IF(AV)
IFSM
Average Rectified Forward Current
(Rated VR) TC= 125℃
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
60
42
10
150
V
V
A
A
TJ Junction Temperature
-65~150 ℃
Tstg Storage Temperature Range
-65~150 ℃
dv/dt Voltage Rate of Change (Rated VR)
1000 V/μs
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBR1060.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MBR1060 | Schottky Barrier Rectifier ( Diode ) | Inchange Semiconductor |
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