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PDF MBR30H100CT Data sheet ( Hoja de datos )
| Número de pieza | MBR30H100CT | |
| Descripción | Schottky Barrier Rectifier ( Diode ) | |
| Fabricantes | Inchange Semiconductor | |
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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR30H100CT
FEATURES
·Low forward voltage
·Low power loss,high efficiency
·High surge capability
·175℃ operating junction temperature
·Pb-Free Package is Available
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
IF(AV)
IFSM
TJ
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
100
Average Rectified Forward Current (Per Leg)
(Total)
15
30
Peak Forward Surge Current, 8.3 ms single
halfsine-wave superimposed on rated load
(JEDEC method)
250
Junction Temperature
-65~175
V
A
A
℃
Tstg Storage Temperature Range
-65~175 ℃
dv/dt Voltage Rate of Change (Rated VR)
10,000 V/μs
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBR30H100CT.PDF ] | |
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