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Inchange Semiconductor - N-Channel MOSFET Transistor

Numéro de référence IRFP351R
Description N-Channel MOSFET Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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IRFP351R fiche technique
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP351(R)
FEATURES
·Drain Current –ID= 13A@ TC=25
·Drain Source Voltage-
: VDSS= 350V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.3Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Pluse
PD Total Dissipation @TC=25
TJ Max. Operating Junction Temperature
Tstg Storage Temperature
VALUE UNIT
350 V
±20
V
15 A
60 A
150 W
-55~150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Rth j-a Thermal Resistance, Junction to Ambient
MAX
0.83
80
UNIT
/W
/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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