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Numéro de référence | IRFP351R | ||
Description | N-Channel MOSFET Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP351(R)
FEATURES
·Drain Current –ID= 13A@ TC=25℃
·Drain Source Voltage-
: VDSS= 350V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.3Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Pluse
PD Total Dissipation @TC=25℃
TJ Max. Operating Junction Temperature
Tstg Storage Temperature
VALUE UNIT
350 V
±20
V
15 A
60 A
150 W
-55~150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Rth j-a Thermal Resistance, Junction to Ambient
MAX
0.83
80
UNIT
℃/W
℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ IRFP351R ] |
No | Description détaillée | Fabricant |
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