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PDF IRFZ24N Data sheet ( Hoja de datos )
| Número de pieza | IRFZ24N | |
| Descripción | N-Channel MOSFET Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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1. IRFZ24N transistor mosfet  Hay una vista previa y un enlace de descarga de IRFZ24N (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFZ24N
FEATURES
·Drain Current –ID=17A@ TC=25℃
·Drain Source Voltage-
: VDSS= 55V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.07Ω(Max)
·Fast Switching
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
DESCRIPTION
·Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls, these
devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
Drain Current-Continuous@TC=25℃
ID
Drain Current-Continuous@TC=100℃
IDM Drain Current-Single Pluse
PD Total Dissipation @TC=25℃
TJ Max. Operating Junction Temperature
Tstg Storage Temperature
VALUE UNIT
55 V
±20
17
12
68
V
A
A
45 W
150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Rth j-a Thermal Resistance, Junction to Ambient
MAX
3.3
62
UNIT
℃/W
℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IRFZ24N.PDF ] | |
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