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PDF MBR10200 Data sheet ( Hoja de datos )
| Número de pieza | MBR10200 | |
| Descripción | Schottky Barrier Rectifier ( Diode ) | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR10200
FEATURES
·Metal silicon junction，majority carrier conduction
·Low Power Loss/High Efficiency
·High current capability，low forward voltage drop
·High surge capability
·Guardring for overvoltage protection
·High temperature soldering guaranteed
·RoHS product
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low-voltage,high frequency inverters，free wheeling
and polarrity protection applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
IRRM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR)
Peak Repetitive Forward Current
(Rated VR,Square Wave,20kHz) TC= 135℃
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
Peak Repetitive Reverse Surge Current
(20μs, 1.0kHz)
200
10
20
150
0.5
V
A
A
A
A
TJ Junction Temperature
-65~150 ℃
Tstg Storage Temperature Range
-65~175 ℃
dv/dt Voltage Rate of Change (Rated VR)
10,000 V/μs
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBR10200.PDF ] | |
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