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Número de pieza | MJ10012T | |
Descripción | Silicon NPN Power Transistor | |
Fabricantes | Inchange Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MJ10012T (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
MJ10012T
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 400V(Min)
·High Power Dissipation
·DARLINGTON
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Automotive ignition
·Switching regulator
·Motor control applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
600 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
8V
IC Collector Current-Continuous
10 A
ICM Collector Current-peak
15 A
IB Base Current
PC
Collector Power Dissipation
@TC=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
2
65
150
-65~150
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Rresistance,Junction to Case 1.9 ℃/W
isc website: www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MJ10012T.PDF ] |
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