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Numéro de référence | KTA1700 | ||
Description | Silicon PNP Power Transistors | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
KTA1700
DESCRIPTION
·High Collector-Emitter Breakdown Voltage
VCEO= -160V(Min)
·Complement to Type KTC2800
APPLICATIONS
·Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5.0 V
IC(DC)
Collector Current(DC)
-1.5 A
IB(DC)
PC
TJ
Base Current
Collector Power Dissipation
@Ta=25℃
Collector Power Dissipation
@TC=25℃
Junction Temperature
Tstg Storage Temperature
-1.0 A
1.5
W
10
150 ℃
-55~150 ℃
isc website: www.iscsemi.com
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ KTA1700 ] |
No | Description détaillée | Fabricant |
KTA1700 | Silicon PNP Power Transistors | Inchange Semiconductor |
KTA1700 | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
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KTA1704 | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
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