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Numéro de référence | KTB778 | ||
Description | Silicon PNP Power Transistors | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·Good Linearity of hFE
·Complement to Type KTD998
APPLICATIONS
·High power amplifier applications
·Recommend for 45-50W audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-10
A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
-1 A
80 W
150 ℃
Tstg Storage Temperature Range -55~150 ℃
isc Product Specification
KTB778
isc website:www.iscsemi.com
isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ KTB778 ] |
No | Description détaillée | Fabricant |
KTB772 | EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING) | KEC(Korea Electronics) |
KTB772 | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
KTB778 | Silicon PNP Power Transistors | Inchange Semiconductor |
KTB778 | TRIPLE DIFFUSED PNP TRANSISTOR | KEC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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