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Numéro de référence | KTD1510 | ||
Description | Silicon NPN Power Transistors | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
KTD1510
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.5V(Max) @IC= 7A
·High DC Current Gain
: hFE= 5000(Min) @ IC= 7A, VCE= 4V
·Complement to Type KTB2510
APPLICATIONS
·High power amplifier applications
·Recommended for 60W audio amplifier output stage
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160 V
VCEO
Collector-Emitter Voltage
150 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
10 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
1A
100 W
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ KTD1510 ] |
No | Description détaillée | Fabricant |
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