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Inchange Semiconductor - Silicon NPN Power Transistors

Numéro de référence KTD1510
Description Silicon NPN Power Transistors
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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KTD1510 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
KTD1510
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.5V(Max) @IC= 7A
·High DC Current Gain
: hFE= 5000(Min) @ IC= 7A, VCE= 4V
·Complement to Type KTB2510
APPLICATIONS
·High power amplifier applications
·Recommended for 60W audio amplifier output stage
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160 V
VCEO
Collector-Emitter Voltage
150 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
10 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
1A
100 W
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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