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Inchange Semiconductor - Silicon NPN Power Transistors

Numéro de référence KTD2059
Description Silicon NPN Power Transistors
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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KTD2059 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KTD2059
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·Collector Power Dissipation-
: PC= 30W@ TC= 25
·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max)@ (IC= 4A, IB= 0.4A)
·Complement to Type KTB1367
APPLICATIONS
·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
5A
IB Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
Tstg Storage Temperature
0.5 A
30 W
150
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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