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Inchange Semiconductor - Silicon NPN Power Transistors

Numéro de référence KTD998
Description Silicon NPN Power Transistors
Fabricant Inchange Semiconductor 
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KTD998 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·Good Linearity of hFE
·Complement to Type KTB778
APPLICATIONS
·High power amplifier applications
·Recommend for 45-50W audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120 V
VCEO
Collector-Emitter Voltage
120 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
10
A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
1A
80 W
150
Tstg Storage Temperature Range -55~150
isc Product Specification
KTD998
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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