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Comchip Technology - SMD Schottky Barrier Diode

Numéro de référence CDBS00340
Description SMD Schottky Barrier Diode
Fabricant Comchip Technology 
Logo Comchip Technology 





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CDBS00340 fiche technique
SMD Schottky Barrier Diode
CDBS00340
Io = 30mA
VR = 40 Volt s
Features
Designed for mounting on small surface
Extremely thin package
Low stored charge
Majority carrier conduction
Mechanical data
Case: 0805(2012) Standard package,
molded plastic.
Terminals: Solder plated, solderable per
MIL-STD-750, method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any.
Weight: 0.0048 gram. (approximately)
COMCHIP
www.comchip.com.tw
0805(2012)
0.087(2.20)
0.079(2.00)
0.016(0.40) Typ
0.008(R0.20) Typ.
0.055(1.40)
0.047(1.20)
0.043 (1.10)
0.035(0.90)
Dimensions in inches and (millimeter)
Maximum Rating ( at T A = 25 C unless otherwise noted )
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Conditions
Symbol Min Typ Max Unit
VRRM
45 V
VR 40 V
IO 30 mA
Forward current , surge peak
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
IFSM
500 mA
Power Dissipation
Storage temperature
Junction temperature
PD
TSTG
Tj
-40
-40
200
+125
+125
mW
C
C
Electrical Characteristics ( at T A = 25 C unless otherwise noted )
Parameter
Conditions
Forward voltage
IF = 1 mA DC
Reverse current
Reverse current
VR = 40 V
VR = 30 V
Capacitance between terminals f = 1MHz, and 1 VDC reverse voltage
Symbol Min Typ Max Unit
VF 0.37 V
IR 1 uA
IR 0.5 uA
CT 2 pF
RDS0208005-C
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