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ROHM Semiconductor - Nch 30V 24A Middle Power MOSFET

Numéro de référence RQ3E110AJ
Description Nch 30V 24A Middle Power MOSFET
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RQ3E110AJ fiche technique
RQ3E110AJ
  Nch 30V 24A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
11.7mΩ
±24A
15W
lFeatures
1) Low on - resistance.
2) Small Surface Mount Package.
3) Pb-free lead plating ; RoHS compliant
lOutline
HSMT8
 
      
lInner circuit
   Datasheet
 
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
12
3000
Taping code
TB
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
E110AJ
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
30 V
Continuous drain current
Tc = 25°C
Ta = 25°C
ID*1
ID
±24 A
±11 A
Pulsed drain current
IDP*2 ±44 A
Gate - Source voltage
VGSS
±12 V
Avalanche current, single pulse
IAS*3 11 A
Avalanche energy, single pulse
EAS*3
4.5 mJ
Power dissipation
PD*1 15 W
PD*4 2.0 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160629 - Rev.002    

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