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PDF BD134 Data sheet ( Hoja de datos )
| Número de pieza | BD134 | |
| Descripción | Silicon PNP Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD134
DESCRIPTION
·DC Current Gain-
: hFE= 40(Min)@ IC= -0.15A
·Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= -45V(Min)
APPLICATIONS
·Designed for use in audio amplifiers and drivers
utilizing complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-45 V
VCEO
Collector-Emitter Voltage
-45 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-1.5 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
-0.5 A
13 W
150 ℃
Tstg Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
5.0 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BD134.PDF ] | |
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