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PDF KTD1824 Data sheet ( Hoja de datos )
| Número de pieza | KTD1824 | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
FOR LOW-FREQUENCY AMPLIFICATION.
FEATURES
ᴌHigh foward current transfer ratio hFE.
ᴌLow collector to emitter saturation voltage VCE(sat).
ᴌHigh emitter to base voltage VEBO.
ᴌLow noise voltage NV.
ᴌUSM type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
MAXIMUM RATINGS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Storage Temperature Range
Tstg
RATING
50
40
15
50
100
100
150
-55ᴕ150
UNIT
V
V
V
mA
mW
ᴱ
ᴱ
KTD1824
EPITAXIAL PLANAR NPN TRANSISTOR
E
MB M
2
1
NK
DIM MILLIMETERS
DA
B
2.00+_ 0.20
1.25 +_ 0.15
3
C 0.90 +_ 0.10
D 0.3+0.10/-0.05
E 2.10 +_ 0.20
G 0.65
H 0.15+0.1/-0.06
J 1.30
K 0.00-0.10
L
HM
0.70
0.42+_ 0.10
N 0.10 MIN
N
1. EMITTER
2. BASE
3. COLLECTOR
USM
Marking
L
Type Name
hFE Rank
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
ICBO
ICEO
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE (Note)
VCE(sat)
VCB=20V, IE=0
VCE=20V, IB=0
IC=10ỌA, IE=0
IC=1mA, IB=0
IE=10ỌA, IC=0
VCE=10V, IC=2mA
IC=10mA, IB=1mA
Transition Frequency
Note : hFE Classification
fT VCB=10V, IE=-2mA, f=200MHz
A:400~800, B:600~1200, C:1000~2000
MIN.
-
-
50
40
15
400
-
-
TYP.
-
-
1000
0.05
120
MAX.
100
1
2000
0.2
-
UNIT
nA
ỌA
V
V
V
V
MHz
2001. 11. 29
Revision No : 1
1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet KTD1824.PDF ] | |
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