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Numéro de référence | 3AD53 | ||
Description | Silicon PNP Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
DESCRIPTION
·DC Current Gain-
: hFE=20-140@IC= -4A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0V(Max)@ IC= -4A
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APPLICATIONS
·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-70 V
VCEO
Collector-Emitter Voltage
-24 V
VEBO
Emitter-Base Voltage
-20 V
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=55℃
TJ Junction Temperature
-6 A
20 W
150 ℃
Tstg Storage Temperature
-55-150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.75
UNIT
℃/W
isc Product Specification
3AD53
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ 3AD53 ] |
No | Description détaillée | Fabricant |
3AD53 | Silicon PNP Power Transistor | Inchange Semiconductor |
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