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Inchange Semiconductor - Silicon PNP Power Transistor

Numéro de référence 3AD53
Description Silicon PNP Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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3AD53 fiche technique
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
DESCRIPTION
·DC Current Gain-
: hFE=20-140@IC= -4A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0V(Max)@ IC= -4A
·
APPLICATIONS
·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-70 V
VCEO
Collector-Emitter Voltage
-24 V
VEBO
Emitter-Base Voltage
-20 V
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=55
TJ Junction Temperature
-6 A
20 W
150
Tstg Storage Temperature
-55-150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.75
UNIT
/W
isc Product Specification
3AD53
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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