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PDF AUIRF7303Q Data sheet ( Hoja de datos )
| Número de pieza | AUIRF7303Q | |
| Descripción | Dual N Channel MOSFET | |
| Fabricantes | Infineon | |
| Logotipo |  |
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AUTOMOTIVE GRADE
AUIRF7303Q
Features
Advanced Planar Technology
Dual N Channel MOSFET
Low On-Resistance
Logic Level Gate Drive
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
S1
G1
S2
G2
1
2
3
4
8 D1
7 D1
6 D2
5 D2
Top View
VDSS
RDS(on) max.
ID
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
SO-8
AUIRF7303Q
G
Gate
D
Drain
30V
0.05
5.3A
S
Source
Base part number
AUIRF7303Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7303QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
EAS (Tested)
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy (Thermally Limited)
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
5.3
4.4
44
2.4
0.02
± 20
414
1160
1.6
-55 to + 175
Units
A
W
W/°C
V
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
RJA Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
Max.
62.5
Units
°C/W
2015-9-30
1 page  
AUIRF7303Q
Fig 12. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 13a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
I AS
Fig 13b. Unclamped Inductive Waveforms
Fig 14a. Switching Time Test Circuit
L
VCC
DUT
0
1K
Fig 15a. Gate Charge Test Circuit
5
Fig 14b. Switching Time Waveforms
Vds
Id
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 15b. Gate Charge Waveform
2015-9-30
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AUIRF7303Q.PDF ] | |
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