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PDF BFP843 Data sheet ( Hoja de datos )
| Número de pieza | BFP843 | |
| Descripción | Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BFP843 (archivo pdf) en la parte inferior de esta página. Total 26 Páginas | ||
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BFP843
Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor
Data Sheet
Revision 1.0, 2013-06-19
RF & Protection Devices
1 page  
BFP843
List of Figures
List of Figures
Figure 4-1 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5-1 BFP843 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 6-1 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . 15
Figure 6-2 DC Current Gain hFE = f (IC), VCE = 1.8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 6-3 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 1.8 V . . . . . . . . . . . . . . . . 16
Figure 6-4 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 1.8 V . . . . . . . . . . . . . . . . . . . 16
Figure 6-5 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 1.8 V . . . . . . . . . . . . . . . . . . . 17
Figure 7-1 3rd Order Intercept Point at Output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters . . . . . . . . 18
Figure 7-2 3rd Order Intercept Point at Output OIP3 [dBm] =f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . 18
Figure 7-3 Compression Point at Output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . . . . . 19
Figure 7-4 Gain Gma, Gms, IS21I² = f (f), VCE = 1.8 V, IC = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 7-5 Maximum Power Gain Gmax = f (IC), VCE = 1.8 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 20
Figure 7-6 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 20
Figure 7-7 Input Reflection Coefficient S11 = f (f), VCE = 1.8 V, IC = 8 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 7-8 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 1.8 V, IC = 8 / 15 mA . . . . . . . . . 21
Figure 7-9 Output Reflection Coefficient S22 = f (f), VCE = 1.8 V, IC = 8 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 7-10 Noise Figure NFmin = f (f), VCE = 1.8 V, IC = 8 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 7-11 Noise Figure NFmin = f (IC), VCE = 1.8 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 23
Figure 7-12 Noise Figure NF50 = f (IC), VCE = 1.8 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 23
Figure 9-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 9-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 9-3 Marking Description (Marking BFP843: T2s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 9-4 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Data Sheet
5 Revision 1.0, 2013-06-19
5 Page 
5 Electrical Characteristics
BFP843
Electrical Characteristics
5.1 DC Characteristics
Table 5-1 DC Characteristics at TA = 25 °C
Parameter
Symbol
Collector emitter breakdown voltage V(BR)CEO
Min.
2.25
Collector emitter leakage current
ICES
–
Collector base leakage current
ICBO
–
Emitter base leakage current
IEBO
–
DC current gain
hFE 150
5.2 General AC Characteristics
Values
Typ. Max.
2.6
– 400
– 400
– 10
260 450
Unit Note / Test Condition
V IC = 1 mA, IB = 0
Open base
nA VCE = 1.5 V, VBE = 0
E-B short circuited
nA VCB = 1.5 V, IE = 0
Open emitter
μA VEB = 0.5 V, IC = 0
Open collector
VCE = 1.8 V, IC = 15 mA
Pulse measured
Table 5-2 General AC Characteristics at TA = 25 °C
Parameter
Symbol
Min.
Collector base capacitance1)
CCB
–
Collector emitter capacitance
CCE
–
Emitter base capacitance
CEB –
1) Including integrated feedback capacitance
Values
Typ. Max.
5.23 –
0.06
0.50 –
0.73 –
Unit Note / Test Condition
pF f = 1 MHz
f = 1 GHz
VCB = 1.8 V, VBE = 0
Emitter grounded
pF f = 1 MHz
VCE = 1.8 V, VBE= 0
Base grounded
pF f = 1 MHz
VEB = 0.4 V,VCB = 0
Collector grounded
Data Sheet
11 Revision 1.0, 2013-06-19
11 Page | ||
| Páginas | Total 26 Páginas | |
| PDF Descargar | [ Datasheet BFP843.PDF ] | |
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