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Número de pieza | IGW30N60TP | |
Descripción | IGBT | |
Fabricantes | Infineon | |
Logotipo | ||
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TRENCHSTOPTMPerformancetechnology
IGW30N60TP
600VIGBTTRENCHSTOPTMPerformanceseries
Datasheet
IndustrialPowerControl
1 page IGW30N60TP
TRENCHSTOPTMPerformanceSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
IGES
gfs
VGE=0V,IC=2.00mA
VGE=15.0V,IC=30.0A
Tvj=25°C
Tvj=175°C
IC=0.48mA,VCE=VGE
VCE=600V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=30.0A
min.
Value
typ.
max. Unit
600 -
-V
- 1.60 1.80 V
- 1.94 -
4.1 5.1 5.7 V
- - 40 µA
---
- - 100 nA
- 26.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Cies
Coes
Cres
Gate charge
QG
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
Short circuit collector current
Max. 1000 short circuits
IC(SC)
Time between short circuits: ≥ 1.0s
VCE=25V,VGE=0V,f=1MHz
VCC=480V,IC=30.0A,
VGE=15V
VGE=15.0V,VCC≤400V,
tSC≤5µs
Tvj=150°C
Value
Unit
min. typ. max.
- 1050 -
- 45 - pF
- 36 -
- 130.0 - nC
- 13.0 - nH
- 137 - A
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=30.0A,
VGE=0.0/15.0V,
RG(on)=10.5Ω,RG(off)=10.5Ω,
Lσ=32nH,Cσ=60pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IKW30N60DTP) reverse
recovery.
min.
Value
typ.
max. Unit
- 15 - ns
- 21 - ns
- 179 - ns
- 12 - ns
- 0.71 - mJ
- 0.42 - mJ
- 1.13 - mJ
5 Rev.2.1,2016-02-05
5 Page IGW30N60TP
TRENCHSTOPTMPerformanceSeries
250
1000
Cies
Coes
Cres
200
150
100
100
50
10
0 10 20 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
0
12 13 14 15 16 17 18 19 20
VGE,GATE-EMITTERVOLTAGE[V]
Figure 18. Typicalshortcircuitcollectorcurrentasa
functionofgate-emittervoltage
(VCE≤400V,startatTj=25°C)
16
14
0.1 D=0.5
12
0.2
0.1
10 0.05
0.02
8 0.01 0.01
single pulse
6
4 0.001
2
0
10 11 12 13 14 15
VGE,GATE-EMITTERVOLTAGE[V]
Figure 19. Shortcircuitwithstandtimeasafunctionof
gate-emittervoltage
(VCE≤400V,startatTj≤150°C)
i: 1 2 3 4 5 6
ri[K/W]: 0.01683439 0.09776416 0.1309769 0.2343649 0.02236283 1.3E-3
τi[s]: 3.1E-5
1.8E-4
1.9E-3
0.01018811 0.07263209 1.842143
1E-4
1E-6
1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 20. TypicalIGBTtransientthermalimpedance
(D=tp/T)
11 Rev.2.1,2016-02-05
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet IGW30N60TP.PDF ] |
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