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IPA65R1K0CE fiches techniques PDF

Infineon - MOSFET ( Transistor )

Numéro de référence IPA65R1K0CE
Description MOSFET ( Transistor )
Fabricant Infineon 
Logo Infineon 





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IPA65R1K0CE fiche technique
IPA65R1K0CE
MOSFET
650VCoolMOS™CEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PCSilverbox,Adapters,LCD&PDPTVandindoorLighting
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Id.typ
Qg.typ
ID,pulse
Eoss@400V
700
1000
7.2
15.3
12
1.5
V
m
A
nC
A
µJ
Type/OrderingCode
IPA65R1K0CE
Package
PG-TO 220 FullPAK
Marking
65S1K0CE
TO-220FP
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-02-19

PagesPages 15
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