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PDF MTB013N10RE3 Data sheet ( Hoja de datos )
| Número de pieza | MTB013N10RE3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB013N10RE3
Spec. No. : C056E3
Issued Date : 2016.11.01
Revised Date :
Page No. : 1/ 8
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.5V, ID=20A
100V
53A
9.6A
11.8 mΩ(typ)
13.4 mΩ(typ)
Symbol
MTB013N10RE3
Outline
TO-220
G：Gate D：Drain S：Source
GDS
Ordering Information
Device
Package
Shipping
MTB013N10RE3-0-UB-X
TO-220
(Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB013N10RE3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C056E3
Issued Date : 2016.11.01
Revised Date :
Page No. : 5/ 8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
100
C oss
10
1
0
Crss
10 20 30 40
VDS, Drain-Source Voltage(V)
50
Forward Transfer Admittance vs Drain Current
100
VDS=10V
10
1 VDS=15V
Threshold Voltage vs Junction Tempearture
1.4
1.2
1 ID=1mA
0.8
0.6
0.4 ID=250μA
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=20V, 50V, 80V
8 from left to right
6
4
0.1
0.01
0.001
Pulsed
Ta=25°C
0.01 0.1
1
10
ID, Drain Current(A)
100
Maximum Safe Operating Area
1000
RDS(ON)
100 Limited
10μs
100μs
10 1ms
1 TC=25°C, Tj=175°C,
VGS=10V,RθJC=2°C/W
single pulse
10ms
100ms
DC
0.1
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
2
ID=20A
0
0 6 12 18 24 30 36 42 48 54 60
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
60
55
50
45
40
35
30
25
20
15
10 VGS=10V, RθJC=2°C/W
5
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTB013N10RE3
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MTB013N10RE3.PDF ] | |
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