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Numéro de référence | CS10N70FA9D | ||
Description | Silicon N-Channel Power MOSFET | ||
Fabricant | Huajing Microelectronics | ||
Logo | |||
Silicon N-Channel Power MOSFET
CS10N70F A9D
○R
General Description:
CS10N70F A9D, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
VDSS
ID
PD (TC=25℃)
RDS(ON)Typ
700
10
50
0.78
switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features:
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data:39nC)
l Low Reverse transfer capacitances(Typical:16pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
VESD(G-S)
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
700
10
8.2
40
±30
550
70
3.7
5.0
50
0.4
4000
150,–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
V
℃
℃
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 1 of 10 2015V01
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Pages | Pages 10 | ||
Télécharger | [ CS10N70FA9D ] |
No | Description détaillée | Fabricant |
CS10N70FA9D | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
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