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PDF BT30N60ANF Data sheet ( Hoja de datos )
| Número de pieza | BT30N60ANF | |
| Descripción | Silicon FS Planar IGBT | |
| Fabricantes | Huajing Microelectronics | |
| Logotipo |  |
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Silicon FS Planar IGBT
BT30N60ANF
○R
General Description：
Using HUAJING's proprietary Planar design and advanced FS
technology, the 600V FSIGBT offers superior conduction and switching
performances, high avalanche ruggedness and easy parallel operation.
VCES
IC
Ptot （TC=25℃）
VCE(SAT)
600
30
312
2.0
V
A
W
V
Features：
l FS Planar Technology, Positive temperature coefficient
l Low saturation voltage: VCE(sat), typ = 2.0V
@ IC = 30A and TC = 25°C
l Extremely enhanced avalanche capability
Applications：
Aircondition、Welding、UPS…
Absolute Maximum Ratings
（Tc= 25℃ unless otherwise specified）：
Symbol
Parameter
VCES
Collector-Emitter Voltage
VGES
Gate- Emitter Voltage
IC
ICMa1
IF
Collector Current
Collector Current @TC = 100 °C
Pulsed Collector Current
Diode Continuous Forward Current @TC = 100 °C
IFM Diode Maximum Forward Current
Power Dissipation @ TC = 25°C
PD
Power Dissipation @TC = 100 °C
TJ，Tstg Operating Junction and Storage Temperature Range
TL Maximum Temperature for Soldering
Rating
600
±20
60
30
90
20
100
312
125
-55 to +150
300
Units
V
V
A
A
A
A
A
W
W
℃
℃
Thermal Characteristics
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD.
Page 1 of 5 2015V01
1 page  
BT30N60ANF
○R
The name and content of poisonous and harmful material in products
Part’s Name
Hazardous Substance
Pb
Hg
Cd
Cr(VI)
PBB
Limit
≤0.1%
≤0.1%
≤0.01%
≤0.1%
≤0.1%
PBDE
≤0.1%
Lead Frame
○ ○ ○○○○
Molding Compound
○
○
○○○○
Chip ○ ○ ○ ○ ○ ○
Wire Bonding
○ ○ ○○○○
Solder
× ○ ○○○○
Means the hazardous material is under the criterion of SJ/T11363-2006.
Means the hazardous material exceeds the criterion of SJ/T11363-2006.
Note
The plumbum element of solder exist in products presently, but within the allowed
range of Eurogroup’s RoHS.
Warnings
1. Exceeding the maximun ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximun ratings of the device.
2. When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
3. IGBTs is the device which is sensitive to the static electricity, it is necessory to protect the
device from being damaged by the static electricity when using it.
4. This publication is made by Huajing Microelectronics and subject to regular change without
notice.
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061
http://www. crhj.com.cn
HTU UTH
Tel: +86 0510-85807228 Fax: +86- 0510-85800864
Marketing Part：
Post：214061
Tel： +86 0510-81805277/81805336
Fax: +86 0510-85800360/85803016
Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Page 5 of 5 2015 V01
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| PDF Descargar | [ Datasheet BT30N60ANF.PDF ] | |
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