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PDF AUIRF1010EZL Data sheet ( Hoja de datos )
| Número de pieza | AUIRF1010EZL | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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AUTOMOTIVE GRADE
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and wide variety of other applications.
AUIRF1010EZ
AUIRF1010EZS
AUIRF1010EZL
VDSS
RDS(on)
typ.
max.
ID (Silicon Limited)
ID (Package Limited)
60V
6.8m
8.5m
84A
75A
DD
GDS
TO-220AB
AUIRF1010EZ
G
Gate
S
G
D2Pak
AUIRF1010EZS
S
GD
TO-262
AUIRF1010EZL
D
Drain
S
Source
Base part number
AUIRF1010EZ
AUIRF1010EZL
AUIRF1010EZS
Package Type
TO-220
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRF1010EZ
AUIRF1010EZL
AUIRF1010EZS
AUIRF1010EZSTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
84
ID @ TC = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
60
75
A
IDM
PD @TC = 25°C
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
340
140 W
0.90 W/°C
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
± 20 V
99
180
mJ
See Fig.15,16, 12a, 12b
A
mJ
-55 to + 175
°C
300
10 lbf•in (1.1N•m)
Thermal Resistance
Symbol
Parameter
RJC
RCS
RJA
RJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient ( PCB Mount, steady state)
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
Typ.
–––
0.50
–––
Max.
1.11
–––
62
40
Units
°C/W
1 2015-9-30
1 page  
AUIRF1010EZ/S/L
100
90
80
70
60
50
40
30
20
10
0
25
Limited By Package
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs. Case Temperature
2.5
ID = 84A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
10
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
J J
1 1
R1R1
Ci= iRi
Ci= iRi
R2R2
2 2
Ri (°C/W)
R3R3
3 3
CC
0.415
0.410
0.285
i (sec)
0.000246
0.000898
0.009546
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5 2015-9-30
5 Page 
TO-262 Package Outline (Dimensions are shown in millimeters (inches)
AUIRF1010EZ/S/L
TO-262 Part Marking Information
Part Number
AUF1010EZL
IR Logo
YWWA
XX XX
Date Code
Y= Year
WW= Work Week
Lot Code
11
2015-9-30
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet AUIRF1010EZL.PDF ] | |
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