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AUIRF1404 fiches techniques PDF

Infineon - Power MOSFET ( Transistor )

Numéro de référence AUIRF1404
Description Power MOSFET ( Transistor )
Fabricant Infineon 
Logo Infineon 





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AUIRF1404 fiche technique
AUTOMOTIVE GRADE
 
Features
Advanced Planar Technology
Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
 
Description
Specifically designed for Automotive applications, this Stripe
Planar design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET® power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
VDSS
RDS(on)
typ.
max.
ID (Silicon Limited)
ID (Package Limited)
AUIRF1404
40V
3.5m
4.0m
202A
160A
G
Gate
GDS
TO-220AB
AUIRF1404
D
Drain
S
Source
Base part number
AUIRF1404
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
AUIRF1404
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance  
Symbol
Parameter
RJC
RCS
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
RJA Junction-to-Ambient
Max.
202
143
160
808
333
2.2
± 20
620
See Fig.15,16, 12a, 12b
1.5
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
 
°C 
 
 
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-9-30

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