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PDF AUIRF1404ZL Data sheet ( Hoja de datos )
| Número de pieza | AUIRF1404ZL | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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AUIRF1404Z
AUTOMOTIVE GRADE
AUIRF1404ZS
AUIRF1404ZL
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
HEXFET® Power MOSFET
VDSS
40V
RDS(on) max.
3.7m
ID (Silicon Limited)
180A
ID (Package Limited)
160A
DD
S
GD
TO-220AB
AUIRF1404Z
G
Gate
S
G
D2Pak
AUIRF1404ZS
D
Drain
S
D
G
TO-262
AUIRF1404ZL
S
Source
Base part number
AUIRF1404Z
AUIRF1404ZL
AUIRF1404ZS
Package Type
TO-220
TO-262
D2-Pak
Standard Pack
Form
Tube
Tube
Tube
Tape and Reel Left
Quantity
50
50
50
800
Orderable Part Number
AUIRF1404Z
AUIRF1404ZL
AUIRF1404ZS
AUIRF1404ZSTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
180
120
160
710
200
1.3
± 20
330
480
See Fig.15,16, 12a, 12b
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
Parameter
RJC
RCS
RJA
RJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
0.50
–––
Max.
0.75
–––
62
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-11-11
1 page  
AUIRF1404Z/S/L
200
Limited By Package
150
100
50
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs. Case Temperature
2.0
ID = 75A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01 0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5 2015-11-11
5 Page 
TO-262 Package Outline (Dimensions are shown in millimeters (inches)
AUIRF1404Z/S/L
TO-262 Part Marking Information
Part Number
AUIRF1404ZL
IR Logo
YWWA
XX XX
Date Code
Y= Year
WW= Work Week
Lot Code
11
2015-11-11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet AUIRF1404ZL.PDF ] | |
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