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PDF AUIRF3205ZS Data sheet ( Hoja de datos )
| Número de pieza | AUIRF3205ZS | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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AUIRF3205Z
AUTOMOTIVE GRADE
AUIRF3205ZS
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
VDSS
HEXFET® Power MOSFET
55V
RDS(on) max.
6.5m
ID (Silicon Limited)
110A
ID (Package Limited)
75A
D
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
GDS
TO-220AB
AUIRF3205Z
S
G
D2Pak
AUIRF3205ZS
G
Gate
D
Drain
S
Source
Base part number
AUIRF3205Z
AUIRF3205ZS
Package Type
TO-220
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRF3205Z
AUIRF3205ZS
AUIRF3205ZSTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
PD @TC = 25°C
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Symbol
Parameter
RJC
RCS
RJA
RJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient ( PCB Mount, steady state)
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
Max.
110
78
75
440
170
1.1
± 20
180
250
See Fig.15,16, 12a, 12b
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
0.50
–––
Max.
0.90
–––
62
40
Units
°C/W
1 2015-11-13
1 page  
120
LIMITED BY PACKAGE
100
80
60
40
20
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs.
Case Temperature
AUIRF3205Z/S
2.5
ID = 66A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
5
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
2015-11-13
5 Page 
AUIRF3205Z/S
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
2015-11-13
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRF3205ZS.PDF ] | |
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