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AUIRF3805S fiches techniques PDF

Infineon - Power MOSFET ( Transistor )

Numéro de référence AUIRF3805S
Description Power MOSFET ( Transistor )
Fabricant Infineon 
Logo Infineon 





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AUIRF3805S fiche technique
 
AUTOMOTIVE GRADE
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
 
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and wide variety of other applications.
VDSS
RDS(on)
typ.
max.
ID (Silicon Limited)
ID (Package Limited)
D
AUIRF3805
AUIRF3805S
AUIRF3805L
55V
2.6m
3.3m
210A
160A
D
GDS
TO-220AB
AUIRF3805
G
Gate
S
G
D2Pak
AUIRF3805S
D
Drain
S
GD
TO-262
AUIRF3805L
S
Source
Base part number
AUIRF3805
AUIRF3805L
AUIRF3805S
Package Type
TO-220
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRF3805
AUIRF3805L
AUIRF3805S
AUIRF3805STRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
210
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
150
160
890
300
2.0
A
W
W/°C
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
± 20 V
650
940
mJ
See Fig.15,16, 12a, 12b
A
mJ
-55 to + 175
 
°C 
300  
10 lbf•in (1.1N•m)
 
Thermal Resistance  
Symbol
Parameter
RJC
RCS
RJA
RJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient ( PCB Mount, steady state)
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
Typ.
–––
0.50
–––
Max.
0.50
–––
62
40
Units
°C/W
1 2015-9-30

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