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PDF AUIRF4104S Data sheet ( Hoja de datos )

Número de pieza AUIRF4104S
Descripción Power MOSFET ( Transistor )
Fabricantes Infineon 
Logotipo Infineon Logotipo



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No Preview Available ! AUIRF4104S Hoja de datos, Descripción, Manual

 
AUTOMOTIVE GRADE
AUIRF4104
AUIRF4104S
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
 
VDSS
RDS(on)
typ.
max.
ID (Silicon Limited)
ID (Package Limited)
40V
4.3m
5.5m
120A
75A
D
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and wide variety of other applications.
GDS
TO-220AB
AUIRF4104
G
Gate
D
Drain
S
G
D2Pak
AUIRF4104S
S
Source
Base part number
AUIRF4104
AUIRF4104S
Package Type
TO-220
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRF4104
AUIRF4104S
AUIRF4104STRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Max.
120
Units
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
84
75
470
140
0.95
A
W
W/°C
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
± 20 V
120
220
mJ
See Fig.15,16, 12a, 12b
A
mJ
-55 to + 175
 
°C 
300  
10 lbf•in (1.1N•m)
 
Thermal Resistance  
Symbol
Parameter
RJC
RCS
RJA
RJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient ( PCB Mount, steady state)
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
Typ.
–––
0.50
–––
Max.
1.05
–––
62
40
Units
°C/W
1 2015-9-30

1 page




AUIRF4104S pdf
  AUIRF4104/S
120
LIMITED BY PACKAGE
100
80
60
40
20
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs. Case Temperature
2.0
ID = 75A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
10
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01 0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
J J
1 1
R1R1
Ci= iRi
Ci= iRi
R2R2
2 2
R3R3 Ri (°C/W)
3 3
CC
0.371
0.337
i (sec)
0.000272
0.001375
0.337 0.018713
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5 2015-9-30

5 Page





AUIRF4104S arduino
  AUIRF4104/S
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
11 2015-9-30

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