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Número de pieza | AUIRF540ZS | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AUIRF540ZS (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! AUTOMOTIVE GRADE
AUIRF540Z
AUIRF540ZS
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and wide variety of other applications.
VDSS
RDS(on) typ.
max.
ID
100V
21m
26.5m
36A
D
GDS
TO-220AB
AUIRF540Z
S
G
D2Pak
AUIRF540ZS
G
Gate
D
Drain
S
Source
Base part number
AUIRF540Z
AUIRF540ZS
Package Type
TO-220
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRF540Z
AUIRF540ZS
AUIRF540ZSTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
36
25
140
92
0.61
± 20
83
120
See Fig.15,16, 12a, 12b
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
Parameter
RJC
RCS
RJA
RJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient ( PCB Mount, steady state)
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
0.50
–––
Max.
1.64
–––
62
40
Units
°C/W
2015-9-30
1 page AUIRF540Z/S
40
30
20
10
0
25
50 75 100 125 150
TJ , Junction Temperature (°C)
175
Fig 9. Maximum Drain Current vs. Case Temperature
3.0
ID = 22A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
10
1 D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01 SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5 2015-9-30
5 Page AUIRF540Z/S
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
11 2015-9-30
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet AUIRF540ZS.PDF ] |
Número de pieza | Descripción | Fabricantes |
AUIRF540Z | Power MOSFET ( Transistor ) | Infineon |
AUIRF540Z | HEXFET Power MOSFET | International Rectifier |
AUIRF540ZS | Power MOSFET ( Transistor ) | Infineon |
AUIRF540ZS | HEXFET Power MOSFET | International Rectifier |
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