|
|
PDF AUIRF7416Q Data sheet ( Hoja de datos )
| Número de pieza | AUIRF7416Q | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AUIRF7416Q (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
AUTOMOTIVE GRADE
AUIRF7416Q
Features
Advanced Process Technology
Low On-Resistance
Logic Level Gate Drive
P Channel MOSFET
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes the
latest processing techniques to achieve low on-resistance
per silicon area. This benefit combined with the fast
switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in
Automotive and a wide variety of other applications.
S
S
S
G
1
2
3
4
A
8D
7D
6D
5D
Top View
VDSS
RDS(on) max.
ID
SO-8
AUIRF7416Q
G
Gate
D
Drain
-30V
0.02
-10A
S
Source
Base part number
AUIRF7416Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7416QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
-10
-7.1
-45
2.5
0.02
± 20
370
-5.0
-55 to + 150
Units
A
W
mW°/C
V
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
RJA Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
Max.
50
Units
°C/W
2015-9-30
1 page  
AUIRF7416Q
Fig 9a. Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
100
D = 0.50
10 0.20
0.10
0.05
0.02
1 0.01
0.1
0.0001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJA + TA
t2
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 2015-9-30
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet AUIRF7416Q.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AUIRF7416Q | Power MOSFET ( Transistor ) | Infineon |
| AUIRF7416Q | Power MOSFET ( Transistor ) |  International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |