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PDF AUIRF7478Q Data sheet ( Hoja de datos )
| Número de pieza | AUIRF7478Q | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AUIRF7478Q (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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AUTOMOTIVE GRADE
AUIRF7478Q
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
VDSS
RDS(on) typ.
max.
ID
60V
20m
26m
7.0A
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
SO-8
AUIRF7478Q
G
Gate
D
Drain
S
Source
Base part number
AUIRF7478Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7478QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
IAR
dv/dt
TJ
TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
60
7.0
5.6
56
2.5
0.02
± 20
140
4.2
3.7
-55 to + 150
Units
V
A
W
W/°C
V
mJ
A
V/ns
°C
Thermal Resistance
Symbol
Parameter
RJL Junction-to-Drain Lead
RJA Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1 2015-9-30
1 page  
AUIRF7478Q
8.0
6.0
4.0
2.0
0.0
25
50 75 100 125
TC, Case Temperature ( °C)
150
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x ZthJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 2015-9-30
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet AUIRF7478Q.PDF ] | |
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