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Numéro de référence | AUIRFR3504 | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | Infineon | ||
Logo | |||
1 Page
AUTOMOTIVE GRADE
Features
Advanced Planar Technology
Low On-Resistance
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of other
applications.
AUIRFR3504
HEXFET® Power MOSFET
VDSS
RDS(on)
typ.
max.
ID (Silicon Limited)
ID (Package Limited)
40V
7.8m
9.2m
87A
56A
D
G
Gate
S
G
D-Pak
AUIRFR3504
D
Drain
S
Source
Base part number
AUIRFR3504
Package Type
D-Pak
Standard Pack
Form
Quantity
Tube
75
Tape and Reel Left
3000
Orderable Part Number
AUIRFR3504
AUIRFR3504TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (Tested)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
87
61
56
350
140
0.92
± 20
240
480
See Fig.15,16, 12a, 12b
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
Parameter
RJC Junction-to-Case
RJA Junction-to-Ambient ( PCB Mount)
RJA Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
Typ.
–––
–––
–––
Max.
1.09
50
110
Units
°C/W
1 2015-11-23
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Pages | Pages 11 | ||
Télécharger | [ AUIRFR3504 ] |
No | Description détaillée | Fabricant |
AUIRFR3504 | Power MOSFET ( Transistor ) | Infineon |
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