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Número de pieza | HFP15N06 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | HUASHAN ELECTRONIC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HFP15N06 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Shantou Huashan Electronic Devices Co.,Ltd.
HFP15N06
N-Channel Enhancement Mode Field Effect Transistor
█ Applications
• Servo motor control.
• Power MOSFET gate drivers.
• DC/DC converters
• Other switching applications.
█ Features
• 15A, 60V(See Note), RDS(on) <100mVΩ@VGS = 5V
• Fast switching
• 100% avalanche tested
• Minimize input capacitance and gate charge
• Exceptional dv/dt capability
TO-220
1- G 2-D 3-S
█ Maximum Ratings(Ta=25℃ unless otherwise specified)
Tstg——Storage Temperature ------------------------------------------------------ -55~150℃
Tj ——Operating Junction Temperature -------------------------------------------------- 150℃
VDSS —— Drain-Source Voltage ----------------------------------------------------------60V
VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±15V
ID —— Drain Current (Continuous)(Tc=25℃)----------------------------------------------------------- 15A
IDM —— Pulsed Drain Current (Note 1)------------------------------------------------------------------- 60A
PD —— Maximum Power Dissipation (Tc=25℃)-------------------------------------------------------- 60W
EAS—— Pulsed Avalanche Energy (Note 2) ------------------------------------------------------------- 50mJ
█ Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220
Max 4.38
Max 58
Unit
℃/W
℃/W
1 page Shantou Huashan Electronic Devices Co.,Ltd.
█ Typical Characteristics
HFP615N06
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet HFP15N06.PDF ] |
Número de pieza | Descripción | Fabricantes |
HFP15N06 | N-Channel Enhancement Mode Field Effect Transistor | HUASHAN ELECTRONIC |
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