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PDF HFP60N06 Data sheet ( Hoja de datos )
| Número de pieza | HFP60N06 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | HUASHAN ELECTRONIC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HFP60N06 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Shantou Huashan Electronic Devices Co.,Ltd.
HFP60N06
N-Channel Enhancement Mode Field Effect Transistor
█ Applications
• Servo motor control.
• Power MOSFET gate drivers.
• DC/DC converters
• Other switching applications.
█ Features
• 60A, 60V(See Note), RDS(on) <11.5mVΩ@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Minimize input capacitance and gate charge
• Exceptional dv/dt capability
TO-220
1- G 2-D 3-S
█ Maximum Ratings（Ta=25℃ unless otherwise specified）
Tstg——Storage Temperature ------------------------------------------------------ -55~165℃
Tj ——Operating Junction Temperature -------------------------------------------------- 150℃
VDSS —— Drain-Source Voltage ----------------------------------------------------------60V
VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±20V
ID —— Drain Current (Continuous)(Tc=25℃)----------------------------------------------------------- 60A
IDM —— Pulsed Drain Current (Note 1)----------------------------------------------------------------- 240A
PD —— Maximum Power Dissipation (Tc=25℃)------------------------------------------------------ 150W
EAS—— Pulsed Avalanche Energy (Note 2) ------------------------------------------------------------ 550mJ
█ Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220
Max 1.13
Max 63
Unit
℃/W
℃/W
1 page  
Shantou Huashan Electronic Devices Co.,Ltd.
█ Typical Characteristics
HFP60N06
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HFP60N06.PDF ] | |
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