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PDF HFU70N03V Data sheet ( Hoja de datos )
| Número de pieza | HFU70N03V | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | HUASHAN ELECTRONIC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HFU70N03V (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Shantou Huashan Electronic Devices Co.,Ltd.
HFU70N03V
N-Channel Enhancement Mode Field Effect Transistor
█ Applications
• Portable Equipment.
• LCD Display Inverter.
• DC/DC converters
• Other switching applications.
█ Features
• 50A, 30V(See Note), RDS(on) <6.6mVΩ@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Minimize input capacitance and gate charge
• Equivalent Type:ME70N03
TO-251
1- G 2-D 3-S
█ Maximum Ratings（Ta=25℃ unless otherwise specified）
Tstg——Storage Temperature ------------------------------------------------------ -55~150℃
Tj ——Operating Junction Temperature -------------------------------------------------- 150℃
VDSS —— Drain-Source Voltage ----------------------------------------------------------30V
VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±20V
ID —— Drain Current (Continuous)(Tc=25℃)----------------------------------------------------------- 50A
IDM —— Pulsed Drain Current (Note 1)----------------------------------------------------------------- 100A
PD —— Maximum Power Dissipation (Tc=25℃)------------------------------------------------------ 40W
EAS—— Pulsed Avalanche Energy(L=0.5mH, Rg=25Ω)-------------------------------------------- 115mJ
Rthj-case—— Thermal Resistance Junction-case-----------------------------------------------------20℃/W
1 page  
Shantou Huashan Electronic Devices Co.,Ltd.
█ Typical Characteristics
HFU70N03V
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HFU70N03V.PDF ] | |
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