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PDF RS1006D1 Data sheet ( Hoja de datos )

Número de pieza RS1006D1
Descripción Fast Recovery Rectifier Diode
Fabricantes Taiwan Semiconductor 
Logotipo Taiwan Semiconductor Logotipo



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No Preview Available ! RS1006D1 Hoja de datos, Descripción, Manual

Small Signal Product
Fast Recovery Rectifier Diode
RS1006D1
Taiwan Semiconductor
FEATURES
- Surface Mount Device Type
- Moisture sensitivity level 1
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
- High Frequency Rectification
- Ideal for Surface Mounted Applications
SOD-123
MECHANICAL DATA
- Case: Bend lead SOD-123 small outline plastic package
- Terminal: Matte tin plated, lead free , solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Marking: R6D
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @t8.3 ms
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
VRRM
VRWM
VR(RMS)
Io
IFSM
PD
RθJA
TJ
TSTG
600
420
1.0
18
415
301
150
- 55 to + 150
UNIT
V
V
V
A
A
mW
oC/W
oC
oC
PARAMETER
Reverse Leakage Current
SYMBOL MIN
IR -
Forward Voltage
VF
Total Capacitance
Reverse Recovery Time (Note 1)
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1A, IRR=0.25A
Ctot
trr
-
TYP
15
MAX
1
1.15
1.3
150
TEST CONDITION
VR=600V
IF=0.7A
IF=1.0A
VR=0V, f=1.0MHz
UNIT
µA
V
V
pF
ns
Document Number: DS_S1402007
Version: A14

1 page





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