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IDT - Dual 1:8 LVDS Output 1.8V Fanout Buffer

Numéro de référence 8P34S2108
Description Dual 1:8 LVDS Output 1.8V Fanout Buffer
Fabricant IDT 
Logo IDT 





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8P34S2108 fiche technique
Dual 1:8 LVDS Output 1.8V Fanout Buffer
8P34S2108
Datasheet
Description
The 8P34S2108 is a high-performance, low-power, differential
dual 1:8 LVDS output 1.8V fanout buffer. The device is designed
for the fanout of high-frequency, very low additive phase-noise
clock and data signals. Two independent buffer channels are
available, each channel has two low skew outputs. High isolation
between channels minimizes noise coupling. AC characteristics
such as propagation delay are matched between channels.
Guaranteed output-to-output and part-to-part skew characteristics
make the 8P34S2108 ideal for those clock distribution
applications demanding well-defined performance and
repeatability. The device is characterized to operate from a 1.8V
power supply. The integrated bias voltage references enable easy
interfacing AC-coupled signals to the device inputs.
Block Diagram
QA0
nQA0
QA1
nQA1
VDDA
QA2
nQA2
51k
CLKA
nCLKA
51k 51k
QA3
nQA3
QA4
nQA4
QA5
nQA5
VREFA
SELAA
Voltage
Reference A
VDDA
51k
QA6
nQA6
QA7
nQA7
QB0
nQB0
QB1
nQB1
VDDB
QB2
nQB2
51k
CLKB
nCLKB
51k 51k
VREFB
Voltage
Reference B
VDDB
QB3
nQB3
QB4
nQB4
QB5
nQB5
QB6
nQB6
51k
SELAB
8P34S2108 transistor count: 1113
QB7
nQB7
Features
Dual 1:8 low skew, low additive jitter LVDS fanout buffers
Matched AC characteristics across both channels
High isolation between channels
Low power consumption
Both differential CLKA, nCLKA and CLKB, nCLKB inputs
accept LVDS, LVPECL and single-ended LVCMOS levels
Maximum input clock frequency: 2GHz
Output amplitudes: 350mV, 500mV (selectable)
Output bank skew: 10ps typical
Output skew: 20ps typical
Low additive phase jitter, RMS: 45fs typical
(fREF = 156.25MHz, 12kHz - 20MHz)
Full 1.8V supply voltage mode
Device current consumption (IDD): 280mA typical
Lead-free (RoHS 6), 48-lead VFQFN packaging
-40°C to 85°C ambient operating temperature
Supports case temperature up to 105°C
©2016 Integrated Device Technology, Inc.
1
October 20, 2016

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