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PDF BTH151S-650R Data sheet ( Hoja de datos )
| Número de pieza | BTH151S-650R | |
| Descripción | Thyristor | |
| Fabricantes | Philips | |
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Philips Semiconductors
Thyristor
High Repetitive Surge
Product specification
BTH151S-650R
GENERAL DESCRIPTION
Passivated thyristor in a plastic envelope,
suitable for surface mounting, intended for
use in applications requiring high
bidirectional blocking voltage capability and
high thermal cycling performance. This
thyristor has a high repetitive surge
specification which makes it suitable for
applications where high inrush currents or
stall currents are likely to occur on a
repetitive basis.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. UNIT
VDRM, VRRM
IT(AV)
IT(RMS)
ITSM
ITRM
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state current
Repetitive peak on-state current
650
7.5
12
110
60
V
A
A
A
A
PINNING - SOT428
PIN DESCRIPTION
1 cathode
2 anode
3 gate
tab anode
PIN CONFIGURATION
tab
2
13
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM,
VRRM
Repetitive peak off-state
voltages
half sine wave;
-
IT(AV)
IT(RMS)
ITSM
ITRM
I2t
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj
Average on-state current Tmb ≤ 103 ˚C
RMS on-state current
all conduction angles
Non-repetitive peak
on-state current
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
Repetitive peak on-state t = 10ms, τ = 3s, Tmb ≤ 45˚C, no.
current
of surges = 100k
I2t for fusing
t = 10 ms
Repetitive rate of rise of
on-state current after
triggering
ITM = 20 A; IG = 50 mA;
dIG/dt = 50 mA/µs
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
1650
7.5
12
110
121
60
61
50
2
5
5
5
0.5
150
125
UNIT
V
A
A
A
A
A
A2s
A/µs
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
March 2001
1
Rev 1.001
1 page  
Philips Semiconductors
Thyristor
High Repetitive Surge
Product specification
BTH151S-650R
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.1 g
6.73 max
tab
1.1
seating plane
2.38 max
0.93 max
5.4
6.22 max
10.4 max
4 min
4.6
1
2.285 (x2)
MOUNTING INSTRUCTIONS
2
3
0.5 min
0.8 max
(x2)
0.5
0.3
0.5
Fig.14. SOT428 : centre pin connected to tab.
Dimensions in mm
7.0
7.0
2.15 1.5
2.5
Notes
1. Plastic meets UL94 V0 at 1/8".
4.57
Fig.15. SOT428 : minimum pad sizes for surface mounting.
March 2001
5
Rev 1.001
5 Page | ||
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| PDF Descargar | [ Datasheet BTH151S-650R.PDF ] | |
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