|
|
Numéro de référence | CJ2301S | ||
Description | P-Channel MOSFET | ||
Fabricant | JCET | ||
Logo | |||
1 Page
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2301S P-Channel 20-V(D-S) MOSFET
V(BR)DSS
RDS(on)MAX
-20 V
112mΩ@-4.5V
142mΩ@-2.5V
ID
-2.3A
SOT-23
1. GATE
2. SOURCE
3. DRAIN
FEATURE
TrenchFET Power MOSFET
APPLICATION
z Load Switch for Portable Devices
z DC/DC Converter
MARKING
Equivalent Circuit
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Thermal Resistance from Junction to Ambient(t ≤5s)
Junction Temperature
Storage Temperature
VDS
VGS
ID
IDM
IS
PD
RθJA
TJ
Tstg
Value
-20
±8
-2.3
-10
-0.72
0.35
357
150
-55 ~+150
Unit
V
A
W
℃/W
℃
www.cj-elec.com
1
D,Apr,2015
A,Mar,2011
|
|||
Pages | Pages 5 | ||
Télécharger | [ CJ2301S ] |
No | Description détaillée | Fabricant |
CJ2301 | MOSFETS | JCST |
CJ2301-HF | MOSFET ( Transistor ) | Comchip |
CJ2301B | P-Channel MOSFET | JCET |
CJ2301S | P-Channel MOSFET | JCET |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |