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PDF CD40107BMS Data sheet ( Hoja de datos )
| Número de pieza | CD40107BMS | |
| Descripción | CMOS Dual 2 Input NAND Buffer/Driver | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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CD40107BMS
December 1992
CMOS Dual 2 Input NAND Buffer/Driver
Features
Pinouts
• High Voltage Type (20V Rating)
• 32 Times Standard B Series Output Current Drive
Sinking Capability
- 136mA Typ. at VDD = 10V
- VDS = 1V
• 100% Tested for Quiescent Current at 20V
• 5V, 10V and 15V Parametric Ratings
• Maximum Input Current of 1µA at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and +25oC
• Noise Margin (Over Full Package/Temperature Range)
RL to VDD = 10kΩ
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
CD40107BF
TOP VIEW
NC 1
NC 2
A3
B4
C=A• B 5
NC 6
VSS 7
14 VDD
13 NC
12 NC
11 D
10 E
9 F=D• E
8 NC
NC = NO CONNECTION
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”
Functional Diagram
Applications
• Driving Relays, Lamps, LEDs
• Line Driver
• Level Shifter (Up or Down)
C=A• B
A
B
VSS
Description
F=D• E
CD40107BMS is a dual 2 input NAND buffer/driver contain-
D
E
ing two independent 2 input NAND buffers with open drain
single n-channel transistor outputs. This device features a
VSS
wired OR capability and high output sink current capability
(136mA typ. at VDD = 10V, VDS = 1V).
The CD40107BMS is supplied in these 14 lead outline
packages:
Braze Seal DIP
Frit Seal DIP
Ceramic Flatpack
H4H
H1B
H3W
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
7-18
File Number 3355
1 page  
Specifications CD40107BMS
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC
PARAMETER
SYMBOL
DELTA LIMIT
Output Current (Sink)
IOL5
± 20% x Pre-Test Reading
Output Current (Source)
IOH5A
± 20% x Pre-Test Reading
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
MIL-STD-883
METHOD
GROUP A SUBGROUPS
Initial Test (Pre Burn-In)
100% 5004
1, 7, 9
Interim Test 1 (Post Burn-In)
100% 5004
1, 7, 9
Interim Test 2 (Post Burn-In)
100% 5004
1, 7, 9
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Interim Test 3 (Post Burn-In)
100% 5004
1, 7, 9
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Final Test
100% 5004
2, 3, 8A, 8B, 10, 11
Group A
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroup B-6
Sample 5005
1, 7, 9
Group D
Sample 5005
1, 2, 3, 8A, 8B, 9
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
READ AND RECORD
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
Subgroups 1, 2, 3, 9, 10, 11
Subgroups 1, 2 3
CONFORMANCE GROUPS
Group E Subgroup 2
TABLE 7. TOTAL DOSE IRRADIATION
MIL-STD-883
METHOD
TEST
PRE-IRRAD
POST-IRRAD
5005
1, 7, 9
Table 4
READ AND RECORD
PRE-IRRAD
POST-IRRAD
1, 9 Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
OSCILLATOR
FUNCTION
OPEN
GROUND
VDD
9V ± -0.5V
50kHz
25kHz
Static Burn-In 1
(Note 1)
1, 2, 5, 6, 8, 9,
12, 13
3, 4, 7, 10, 11
14
Static Burn-In 2
(Note 1)
1, 2, 5, 6, 8, 9,
12, 13
7 3, 4, 10, 11, 14
Dynamic Burn-In
(Note 3)
1, 2, 6, 8, 12, 13
7
14 5, 9
- 3, 4, 10, 11
Irradiation (Note 2)
1, 2, 5, 6, 8, 9,
12, 13
7 3, 4, 10, 11, 14
NOTE:
1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V
2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V ± 0.5V
3. Each pin except VDD and GND will have a series resistor of 4.75K ±5%, VDD = 18V ±.5.
7-22
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet CD40107BMS.PDF ] | |
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