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Numéro de référence | C3514 | ||
Description | NPN Transistor - 2SC3514 | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3514
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min)
·Good Linearity of hFE
·Complement to Type 2SA1383
APPLICATIONS
·Adudio frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
180 V
VCEO Collector-Emitter Voltage
180 V
VEBO Emitter-Base Voltage
5.0 V
IC Collector Current-Continuous
0.1 A
Collector Power Dissipation@ Ta=25℃
1.5
PC
Collector Power Dissipation@TC=25℃
10
W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature Range
-55~150 ℃
isc Website:www.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 2 | ||
Télécharger | [ C3514 ] |
No | Description détaillée | Fabricant |
C3514 | NPN Transistor - 2SC3514 | Inchange Semiconductor |
C3515 | NPN Transistor - 2SC3515 | Toshiba |
C3518-Z | SILICON POWER TRANSISTOR | Renesas |
C3518-Z | NPN Transistor - 2SC3518-Z | Renesas |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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