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Inchange Semiconductor - NPN Transistor - 2SC3514

Numéro de référence C3514
Description NPN Transistor - 2SC3514
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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C3514 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3514
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min)
·Good Linearity of hFE
·Complement to Type 2SA1383
APPLICATIONS
·Adudio frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
180 V
VCEO Collector-Emitter Voltage
180 V
VEBO Emitter-Base Voltage
5.0 V
IC Collector Current-Continuous
0.1 A
Collector Power Dissipation@ Ta=25
1.5
PC
Collector Power Dissipation@TC=25
10
W
TJ Junction Temperature
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/

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