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PDF KGF65A6H Data sheet ( Hoja de datos )
| Número de pieza | KGF65A6H | |
| Descripción | Trench Field Stop IGBT | |
| Fabricantes | Sanken | |
| Logotipo |  |
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VCE = 650 V, IC = 60 A
Trench Field Stop IGBTs with Fast Recovery Diode
KGF65A6H, MGF65A6H
Data Sheet
Description
The KGF65A6H and MGF65A6H are 650 V Field
Stop IGBTs. Sanken original trench structure decreases
gate capacitance, and achieves high speed switching and
switching loss reduction. Thus, these Field Stop IGBTs
can improve the efficiency of your circuit.
Features
● Low Saturation Voltage
● High Speed Switching
● With Integrated Fast Recovery Diode
● RoHS Compliant
● VCE ------------------------------------------------------ 650 V
● IC (TC = 100 °C) ----------------------------------------- 60 A
● Short Circuit Withstand Time ----------------------- 10 μs
● VCE(sat)-----------------------------------------------1.9 V typ.
● tf (TJ = 175 °C) ------------------------------------ 60 ns typ.
● VF----------------------------------------------------1.8 V typ.
Applications
● Welding Invertor
● PFC Circuit
Packages
TO247-3L
(4)
TO3P-3L
(4)
(1) (2) (3)
(1) (2) (3)
(2)(4)
(1) Gate
(2) Collector
(1) (3) Emitter
(4) Collector
(3)
Selection Guide
Part Number
KGF65A6H
MGF65A6H
Not to scale
Package
TO247-3L
TO3P-3L
xGF65A6H-DSE Rev.1.8
SANKEN ELCTRIC CO.,LTD.
Nov. 10, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2014
1
1 page  
KGF65A6H, MGF65A6H
Rating and Characteristic Curves
1000
100
10
1
0.1
1
IGBT,
Single pulse,
TJ = 175 °C
10
100 1000
Collector–Emitter Voltage, VCE (V)
Figure 2. IGBT Reverse Bias Safe Operating
Area
450
400
350
300
250
200
150
100 VGE = 15 V,
TJ < 175 °C
50
0
25 50 75 100 125 150 175
Case Temperature, TC (°C)
Figure 4. Power Dissipation vs. Case
Temperature
1000
100
10
10 μs
100 μs
1
IGBT,
Single pulse,
TJ = 25 °C
0.1
1
10 100 1000
Collector–Emitter Voltage, VCE (V)
Figure 3. IGBT Safe Operating Area
100
80
60
40
20 VGE = 15 V,
TJ < 175 °C
0
25 50 75 100 125 150 175
Case Temperature, TC (°C)
Figure 5. Collector Current vs. Case Temperature
xGF65A6H-DSE Rev.1.8
SANKEN ELCTRIC CO.,LTD.
Nov. 10, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2014
5
5 Page 
KGF65A6H, MGF65A6H
10
1
0.1
Diode
IGBT
0.01
0.001
1.E-06
1.E-05
TC = 25 °C,
Single pulse,
VCE < 5 V
1.E-04
1.E-03 1.E-02 1.E-01
Pulse Width (s)
1.E+00
Figure 26. Transient Thermal Resistance
1.E+01
1.E+02
xGF65A6H-DSE Rev.1.8
SANKEN ELCTRIC CO.,LTD.
Nov. 10, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2014
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet KGF65A6H.PDF ] | |
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