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PDF L11767 Data sheet ( Hoja de datos )

Número de pieza L11767
Descripción Red LED
Fabricantes HAMAMATSU 
Logotipo HAMAMATSU Logotipo



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No Preview Available ! L11767 Hoja de datos, Descripción, Manual

Red LED
L11767
High output power red emitting diode
The L11767 is a high output red LED that delivers light output more than twice that of our previous products. Electric power
required to provide the same brightness as the previous products is reduced by as much as 70%. The L11767 also offers
high reliability since it is a 4-element (AlGaInP) LED.
Features
High radiant output power (more than twice compared to previous products)
13 mW (IF=20 mA typ.)
High reliability
Applications
Optical switches, etc.
Absolute maximum ratings (Ta=25 °C unless otherwise noted)
Parameter
Symbol
Condition
Value
Unit
Reverse voltage
Forward current
Derating rate of forward
current
VR
IF
Ta > 25 °C
5V
60 mA
0.8 mA/°C
Pulse forward current
IFP
Pulse width=10 μs
Duty ratio=1%
0.5 A
Derating rate of pulse
forward current
Ta > 25 °C
6.7 mA/°C
Power dissipation
P
180 mW
Operating temperature
Topr
-30 to +85
°C
Storage temperature
Tstg *1
-40 to +100
°C
Soldering condition
-
Less than 260 °C, within 5 seconds *2
-
*1: Guaranteed to resist temperature cycle test of up to 5 cycles
*2: At a position at least 1 mm away from the lead base
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Min.
Peak emission wavelength λp IF=20 mA
Spectral half-width
Δλ IF=20 mA
Forward voltage
VF IF=20 mA
650
-
-
Reverse current
Radiant ux
Cutoff frequency*3
IR VR=5 V
φe IF=20 mA
fc IF=20 mA ± 1 mAp-p
-
10
3
*3: Frequency at which the light output drops by 3 dB relative to the output at 100 kHz
Typ.
660
18
2.1
-
13
6
Max.
670
30
2.5
20
-
-
Unit
nm
nm
V
μA
mW
MHz
www.hamamatsu.com
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