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W12NK60Z fiches techniques PDF

STMicroelectronics - N-CHANNEL MOSFET

Numéro de référence W12NK60Z
Description N-CHANNEL MOSFET
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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W12NK60Z fiche technique
STP12NK60Z
STF12NK60Z, STW12NK60Z
N-channel 650 V @Tjmax, 0.53 , 10 A TO-220, TO-220FP, TO-247
Zener-protected SuperMESH™ Power MOSFET
Features
Type
VDSS
RDS(on)
(@Tjmax) max
ID
PW
STP12NK60Z
STF12NK60Z
STW12NK60Z
650 V
650 V
650 V
<0.640 10 A 150 W
<0.640 10 A 35 W
<0.640 10 A 150 W
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Application
Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down,
specialties is taken to ensure a very good dv/dt
capability for the most demanding application.
Such series complements ST full range of high
voltage Power MOSFETs.
Table 1. Device summary
Order codes
Marking
STP12NK60Z
STF12NK60Z
STW12NK60Z
P12NK60Z
F12NK60Z
W12NK60Z
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
D(2)
G(1)
Package
TO-220
TO-220FP
TO-247
S(3)
AM01476v1
Packaging
Tube
Tube
Tube
October 2009
Doc ID 11324 Rev 7
1/15
www.st.com
15

PagesPages 15
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