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Numéro de référence | XP131A0150SR | ||
Description | Power MOS FET | ||
Fabricant | Torex Semiconductor | ||
Logo | |||
1 Page
NN-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance: 0.05Ω (max)
NUltra High-Speed Switching
NSOP-8 Package
GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
The XP131A0150SR is an N-Channel Power MOS FET with low on-
state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
Low on-state resistance : Rds(on)=0.035Ω (Vgs=10V)
: Rds(on)=0.050Ω (Vgs=4.5V)
Ultra high-speed switching
Operational Voltage : 4.5V
High density mounting : SOP-8
PARAMETER
SYMBOL
Ta=25°C
RATINGS UNITS
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Vdss
Vgss
Id
Idp
Idr
30 V
±20 V
7A
20 A
7A
Continuous Channel
Power Dissipation (note)
Pd
2.5 W
Channel Temperature
Tch
Storage Temperature
Tstg
Note: When implemented on a glass epoxy PCB
150
-55~150
:
:
11
715
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Pages | Pages 4 | ||
Télécharger | [ XP131A0150SR ] |
No | Description détaillée | Fabricant |
XP131A0150SR | Power MOS FET | Torex Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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