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XP131A0526SR fiches techniques PDF

Torex Semiconductor - Power MOS FET

Numéro de référence XP131A0526SR
Description Power MOS FET
Fabricant Torex Semiconductor 
Logo Torex Semiconductor 





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XP131A0526SR fiche technique
NN-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance: 0.026(max)
NUltra High-Speed Switching
NSOP-8 Package
GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
The XP131A0526SR is an N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
Low on-state resistance : Rds(on)=0.017(Vgs=10V)
: Rds(on)=0.026(Vgs=4.5V)
Ultra high-speed switching
Operational Voltage : 4.5V
High density mounting : SOP-8
PARAMETER
SYMBOL
Ta=25°C
RATINGS UNITS
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Vdss
Vgss
Id
Idp
Idr
30 V
±20 V
10 A
30 A
10 A
Continuous Channel
Power Dissipation (note)
Pd
2.5 W
Channel Temperature
Tch
Storage Temperature
Tstg
Note: When implemented on a glass epoxy PCB
150
-55~150
°C
°C
11
723

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