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FGB3440G2_F085 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Fairchild Semiconductor - N-Channel Ignition IGBT

شماره قطعه FGB3440G2_F085
شرح مفصل N-Channel Ignition IGBT
تولید کننده Fairchild Semiconductor 
آرم Fairchild Semiconductor 


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FGB3440G2_F085 شرح
May 2014
FGB3440G2_F085 / FGD3440G2_F085
FGP3440G2_F085
EcoSPARK®2 335mJ, 400V, N-Channel Ignition IGBT
Features
„ SCIS Energy = 335mJ at TJ = 25oC
„ Logic Level Gate Drive
Applications
„ Automotive lgnition Coil Driver Circuits
„ Coil On Plug Applications
„ Qualified to AEC Q101
„ RoHS Compliant
Package
JEDEC TO-263AB
D²-Pak
JEDEC TO-220AB
EC
G
Symbol
G
E
JEDEC TO-252AA
D-Pak
GATE
G
COLLECTOR
E (FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
BVCER Collector to Emitter Breakdown Voltage (IC = 1mA)
BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA)
ESCIS25 Self Clamping Inductive Switching Energy (Note 1)
ESCIS150 Self Clamping Inductive Switching Energy (Note 2)
IC25 Collector Current Continuous, at VGE = 4.0V, TC = 25°C
IC110
Collector Current Continuous, at VGE = 4.0V, TC = 110°C
VGEM Gate to Emitter Voltage Continuous
PD
Power Dissipation Total, at TC = 25°C
Power Dissipation Derating, for TC > 25oC
TJ Operating Junction Temperature Range
TSTG Storage Junction Temperature Range
TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s)
TPKG Max. Lead Temp. for Soldering (Package Body for 10s)
ESD Electrostatic Discharge Voltage at100pF, 1500Ω
@2014 Fairchild Semiconductor Corporation
1
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
COLLECTOR
R1
R2
EMITTER
Ratings
400
28
335
195
26.9
25
±10
166
1.1
-40 to +175
-40 to +175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/oC
oC
oC
oC
oC
kV
www.fairchildsemi.com

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