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FGB3040G2_F085 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Fairchild Semiconductor - N-Channel Ignition IGBT

شماره قطعه FGB3040G2_F085
شرح مفصل N-Channel Ignition IGBT
تولید کننده Fairchild Semiconductor 
آرم Fairchild Semiconductor 


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FGB3040G2_F085 شرح
May 2014
FGB3040G2_F085 / FGD3040G2_F085
FGP3040G2_F085 / FGI3040G2_F085
EcoSPARK®2 300mJ, 400V, N-Channel Ignition IGBT
Features
„ SCIS Energy = 300mJ at TJ = 25oC
„ Logic Level Gate Drive
Applications
„ Automotive lgnition Coil Driver Circuits
„ Coil On Plug Applications
„ Qualified to AEC Q101
„ RoHS Compliant
Package
JEDEC TO-263AB
D²-Pak
JEDEC TO-220AB
E CG
Symbol
G
E
JEDEC TO-252AA
D-Pak
JEDEC TO-262AA
EC
G
GATE
G
E
COLLECTOR
(FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
BVCER Collector to Emitter Breakdown Voltage (IC = 1mA)
BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA)
ESCIS25 Self Clamping Inductive Switching Energy (Note 1)
ESCIS150 Self Clamping Inductive Switching Energy (Note 2)
IC25 Collector Current Continuous, at VGE = 5.0V, TC = 25°C
IC110 Collector Current Continuous, at VGE = 5.0V, TC = 110°C
VGEM Gate to Emitter Voltage Continuous
PD
Power Dissipation Total, at TC = 25°C
Power Dissipation Derating, for TC > 25oC
TJ Operating Junction Temperature Range
TSTG Storage Junction Temperature Range
TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s)
TPKG Reflow soldering according to JESD020C
ESD
HBM-Electrostatic Discharge Voltage at100pF, 1500Ω
CDM-Electrostatic Discharge Voltage at 1Ω
@2014 Fairchild Semiconductor Corporation
FGx3040G2_F085 Rev.C4
1
COLLECTOR
R1
R2
EMITTER
Ratings
400
28
300
170
41
25.6
±10
150
1
-55 to +175
-55 to +175
300
260
4
2
Units
V
V
mJ
mJ
A
A
V
W
W/oC
oC
oC
oC
oC
kV
kV
www.fairchildsemi.com

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