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Número de pieza | FDZ1416NZ | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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FDZ1416NZ
Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET
24 V, 7 A, 23 m
Features
Max rS1S2(on) = 23 m at VGS = 4.5 V, IS1S2 = 1 A
Max rS1S2(on) = 25 m at VGS = 4 V, IS1S2 = 1 A
Max rS1S2(on) = 28 m at VGS = 3.1 V, IS1S2 = 1 A
Max rS1S2(on) = 33 m at VGS = 2.5 V, IS1S2 = 1 A
Occupies only 2.2 mm2 of PCB area
Ultra-thin package: less than 0.35 mm height when mounted
to PCB
High power and current handling capability
HBM ESD protection level > 3.2 kV (Note 3)
RoHS Compliant
General Description
This device is designed specifically as a single package solution
for Li-Ion battery pack protection circuit and other ultra-portable
applications. It features two common drain N-channel
MOSFETs, which enables bidirectional current flow, on
Fairchild’s advanced PowerTrench® process with state of the art
“low pitch” WLCSP packaging process, the FDZ1416NZ
minimizes both PCB space and rS1S2(on). This advanced
WLCSP MOSFET embodies a breakthrough in packaging
technology which enables the device to combine excellent
thermal transfer characteristics, ultra-low profile packaging, low
gate charge and low rS1S2(on).
Applications
Battery management
Load switch
Battery protection
PIN1
S1
PIN1
S1
S2 G1
G2
G1
G2
TOP
BOTTOM
WL-CSP 1.4X1.6
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VS1S2
VGS
IS1S2
PD
TJ, TSTG
Parameter
Source1 to Source2 Voltage
Gate to Source Voltage
Source1 to Source2 Current -Continuous TA = 25°C
-Pulsed
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
S2
Ratings
24
±12
7
30
1.7
0.5
-55 to +150
Units
V
V
A
W
°C
RJA
RJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
74
230
°C/W
Device Marking
EN
Device
FDZ1416NZ
Package
WL-CSP 1.4X1.6
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
©2012 Fairchild Semiconductor Corporation
FDZ1416NZ Rev.1.6
1
www.fairchildsemi.com
1 page Typical Characteristics TJ = 25°C unless otherwise noted
100
10
1
0.1
10-3
SINGLE PULSE
RJA = 230 oC/W
TA = 25 oC
10-2
10-1
100
101
t, PULSE WIDTH (sec)
Figure 13. Single Pulse Maximum Power Dissipation
100
2
1
0.1
0.01
0.001
10-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RJA = 230 oC/W
(Note 1b)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJA x RJA + TA
10-2
10-1
100
101
100
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
1000
1000
The following information applies to the WL-CSP package dimensions on the next page:
Pin Definitions:
Pin Name
Position
G1
A2
Product Specific Dimensions:
D
1.4 mm
E
1.6 mm
G2 S1 S2
B2 A1 B1
X
0.475 mm
Y
0.375 mm
©2012 Fairchild Semiconductor Corporation
FDZ1416NZ Rev.1.6
5
www.fairchildsemi.com
5 Page |
Páginas | Total 7 Páginas | |
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